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ردیف
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عنوان مقاله
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مشخصات مجله
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اسامي همكاران به ترتيب اولويت
(شامل نام متقاضي)
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نام کامل مجله
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ISSN
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نمایه مجله
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IF
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سال
چاپ
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شماره جلد و شماره صفحات
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1
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A Computational Study of a Heterostructure Tunneling Carbon Nanotube Field-Effect Transistor
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Journal of ELECTRONIC MATERIALS
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0361-5235
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ISI
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1.579
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2019
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1-7
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S. H. Tahaei,
S. S. Ghoreishi,
R. Yousefi,
H. Aderang
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2
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A New Step Response Modeling in CMOS Operational Amplifiers
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Analog Integrated Circuits and Signal Processing
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0925-1030
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ISI
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0.623
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2019
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76 (3)
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H. gholamnataj
H. Aderang
S. S. Mohseni
S. S. Ghoreishi
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3
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A computational study of a carbon nanotube junctionless tunneling
field-effect transistor (CNT-JLTFET) based on the charge plasma
concept
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Superlattices and Microstructures
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0749-6036
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ISI
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2.117
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2019
|
168-176
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S. H. Tahaei,
S. S. Ghoreishi,
R. Yousefi,
H. Aderang
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4
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A Computational Study of an Optimized MOS-Like Graphene
Nano Ribbon Field Effect Transistor (GNRFET)
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ECS Journal of Solid State Science and Technology
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2162-8769
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ISI
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1.8
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2018
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7 (3) P96-P101
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M. A. Khorshidsavar, S. S. Ghoreishi, R. Yousefi
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5
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Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
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International Journal of Nano Dimension
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2008-8868
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ESCI
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-
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2018
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9 (1), 32-40
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M. Faraji, S. S. Ghoreishi, R. Yousefi
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6
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An Analytical Model for Ballistic Carbon Nanotube Field Effect
Transistor Applicable to Circuit Simulators
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ECS Journal of Solid State Science and Technology
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2162-8769
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ISI
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1.8
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2017
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6 (9)
M109-M113
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R Yousefi
SS Ghoreishi
M. Kabir
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7
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A numerical study of the nanoribbon field-effect transistors
under the ballistic and dissipative transport
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International Journal of Nano Letter
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2008-9295
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ISC
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-
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2017
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7 (3)
225-232
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SS Ghoreishi
R Yousefi
K Saghafi
MK Moravvej-Farshi
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8
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Performance Evaluation and Design Considerations of Electrically Activated Drain Extension Tunneling GNRFET:
A Quantum Simulation Study
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Journal of ELECTRONIC MATERIALS
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0361-5235
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ISI
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1.579
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2017
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46 (11)
6508-6517
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SS Ghoreishi
R Yousefi
N. Taghavi
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9
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A computational study of a novel graphene nanoribbon field effect transistor
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International Modern Physics Letters B (IJMPLB)
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0217-9792
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ISI
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0.79
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2017
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30-1750056
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SS Ghoreishi
R Yousefi
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10
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A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies
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Superlattices and Microstructures
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0749-6036
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ISI
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2.117
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2016
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97
277-286
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SS Ghoreishi, K Saghafi, R Yousefi, MK Moravvej-Farshi
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11
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Effect of uniaxial strain on electrical properties of CNT-based
junctionless field-effect transistor: Numerical study
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Superlattices and Microstructures
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0749-6036
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ISI
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2.117
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2016
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93
92-100
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P. Pourian
R. Yousefi
SS Ghoreishi
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12
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Graphene Nanoribbon Tunnel Field Effect Transistor with Lightly Doped Drain: Numerical Simulations
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Superlattices and Microstructures
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0749-6036
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ISI
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2.117
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2014
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75
245–256
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SS Ghoreishi, K Saghafi, R Yousefi, MK Moravvej-Farshi
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13
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A NOVEL GRAPHENE NANO-RIBBON FIELD EFFECT TRANSISTOR WITH SCHOTTKY TUNNELING DRAIN AND OHMIC TUNNELING SOURCE
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Modern Physics Letters B (MPLB)
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0217-9849
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ISI
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0.687
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2013
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26
1350189
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SS Ghoreishi, K Saghafi,
MK Moravvej-Farshi
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14
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Numerical Study of Ohmic-Schottky Carbon Nanotube Field Effect Transistor
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Modern Physics Letters B (MPLB)
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0217-9849
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ISI
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0.687
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2012
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26(15)
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R Yousefi, SS Ghoreyshi
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15
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Modeling of jitter in bang-bang clock and data recovery circuits
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COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering
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0332-1649
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ISI
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0.57
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2013
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32(3)
1151-1168
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H. Aderang
S.S. Ghoreishi
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16
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A New Dual-Frequency LC Oscilator Analysis and Design
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Majlesi Journal of Telecomiunication Device
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ISC
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2013
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Vol.2 NO. 2 225-231
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H. Aderang
S.S. Ghoreishi
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15
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A COMPUTATIONAL STUDY OF STRAIN EFFECTS IN THE BAND-TO-BAND-TUNNELING CARBON NANOTUBE FIELD-EFFECT TRANSISTORS
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International Journal of Modern Physics B
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0217-9792
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ISI
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0.79
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2012
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26(29)
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R Yousefi, SS Ghoreishi
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17
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A computational study on electrical characteristics of a novel band-to-band tunneling graphene nanoribbon FET
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Superlattices and Microstructures
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0749-6036
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ISI
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2.117
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2013
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60
169-178
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R Yousefi, M Shabani, M Arjmandi, SS Ghoreishi
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18
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Designing New Model of BAW Resonator to Use At Oscillator Circuits with MEMS Technology
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International Journal of Mechatronics, Electrical and Computer Technology
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2305-0543
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ISC
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---
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2015
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The proceeding of NAEC 2014
294-309
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Mohsen Zafari
H. Aderang
S.S. Ghoreishi
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19
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Study and Simulation Source-Island and Drain-Island Tunnel Junction Parameters Variations effects on the Single-Island SET Characteristics Curves by Master Equations
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International Journal of Mechatronics, Electrical and Computer Technology
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2305-0543
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ISC
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---
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2015
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The proceeding of NAEC 2014
. 255-267
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Seyedkeyvan Babaei, Seyedsaleh Ghoreishi Amiri,
Reza Yousefi
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